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Growth and characterization of Ga2Se3 by molecular beam epitaxy

โœ Scribed by Nobuaki Teraguchi; Makoto Konagai; Fuji Kato; Kiyoshi Takahashi

Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
364 KB
Volume
115
Category
Article
ISSN
0022-0248

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The value of in situ monitoring to study growth dynamics and surface reaction kinetics in a gas source molecular beam epitaxy process is illustrated with reference to the growth of Si ยฎlms on Si(001) substrates using a beam of disilane (Si 2 H 6 ). By using a combination of reยฏection high-energy ele