Growth and characteristics of polycrystalline 3C–SiC films for extreme environment micro/nano-electromechanical systems

✍ Scribed by Kang-San Kim; Gwiy-Sang Chung

• Publisher: Elsevier Science
• Year: 2009
• Tongue: English
• Weight: 883 KB
• Volume: 155
• Category: Article
• ISSN: 0924-4247
• DOI: 10.1016/j.sna.2009.08.005

✦ Synopsis

This paper presents the growth conditions, physical, chemical, mechanical and optical characteristics of polycrystalline 3C-SiC films for extreme environment micro/nano-electromechanical systems (M/NEMS). The growth of the polycrystalline 3C-SiC thin film on oxidized Si wafers was carried out by using atmospheric pressure chemical vapor deposition (APCVD) with a single-precursor of hexamethyldisilane (HMDS: Si 2 (CH 3 ) 6 ). The growth temperature and the HMDS flow rate were adjusted from 1000 to 1200 • C and from 6 to 8 sccm, respectively. The effect of H 2 carrier gas addition was also evaluated to reduce surface roughness and improve mechanical properties. The grown polycrystalline 3C-SiC films grown in this work had very good crystal quality without twins, defects, or dislocations. Therefore, it is expected to have applications in harsh environment, RF and bio M/NEMS devices.