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Graphene on the carbon face of SiC: Electronic structure modification by hydrogen intercalation

✍ Scribed by Hiebel, F.; Mallet, P.; Veuillen, J.-Y.; Magaud, L.

Book ID
118161035
Publisher
The American Physical Society
Year
2011
Tongue
English
Weight
625 KB
Volume
83
Category
Article
ISSN
1098-0121

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A characterization of the graphitic overlayer that forms on 4H-SiCð0 0 0 1Þ substrates heated for ten minutes to temperatures T > 1350 °C under vacuum conditions has been performed. X-ray photoelectron spectroscopy of the C-face reveals the presence of graphitic carbon with a thickness that increas