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Graphene magnetoresistance in a parallel magnetic field: Spin polarization effect

✍ Scribed by Hwang, E.; Das Sarma, S.


Book ID
111974088
Publisher
The American Physical Society
Year
2009
Tongue
English
Weight
118 KB
Volume
80
Category
Article
ISSN
1098-0121

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We measured the magnetoresistance of a two-dimensional electron gas in a strongly disordered silicon MOSFET system in the presence of a parallel magnetic field up to 40 T. We observe resistance saturation for magnetic fields larger than the calculated magnetic field for fully spin-polarized electron