Magnetoresistance of a Si-MOSFET structu
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J.M. Broto; M. Goiran; H. Rakoto; A. Gold; V.T. Dolgopolov
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Article
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2004
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Elsevier Science
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English
β 246 KB
We measured the magnetoresistance of a two-dimensional electron gas in a strongly disordered silicon MOSFET system in the presence of a parallel magnetic field up to 40 T. We observe resistance saturation for magnetic fields larger than the calculated magnetic field for fully spin-polarized electron