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Spin effects in magnetoresistance induced in ann-InxGa1−xAs/GaAs double quantum well by a parallel magnetic field

✍ Scribed by M. V. Yakunin; G. A. Al’shanskii; Yu. G. Arapov; V. N. Neverov; G. I. Kharus; N. G. Shelushinina; B. N. Zvonkov; E. A. Uskova; A. de Visser; L. Ponomarenko


Book ID
110140924
Publisher
Springer
Year
2005
Tongue
English
Weight
81 KB
Volume
39
Category
Article
ISSN
1063-7826

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