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Magnetoresistance of a Si-MOSFET structure in a parallel magnetic field

โœ Scribed by J.M. Broto; M. Goiran; H. Rakoto; A. Gold; V.T. Dolgopolov

Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
246 KB
Volume
346-347
Category
Article
ISSN
0921-4526

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โœฆ Synopsis

We measured the magnetoresistance of a two-dimensional electron gas in a strongly disordered silicon MOSFET system in the presence of a parallel magnetic field up to 40 T. We observe resistance saturation for magnetic fields larger than the calculated magnetic field for fully spin-polarized electron gas. Our experimental results on the magnetoresistance can be quantitatively described by a transport theory taking into account screening and finite width effects in a spin-polarized electron gas.

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Conductance asymmetry of a slot gate Si-MOSFET in a strong parallel magnetic field
โœ I. Shlimak; D.I. Golosov; A. Butenko; K.-J. Friedland; S.V. Kravchenko ๐Ÿ“‚ Article ๐Ÿ“… 2009 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 181 KB ๐Ÿ‘ 3 views

We report measurements on a Si-MOSFET sample with a slot in the upper gate, allowing for different electron densities n1,2 across the slot. The dynamic longitudinal resistance was measured by the standard lock-in technique, while maintaining a large DC current through the source-drain channel. We fi