High-output-power AlGaN/GaN ultraviolet-
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Nagata, Kengo ;Ichikawa, Tomoki ;Takeda, Kenichiro ;Nagamatsu, Kentaro ;Iwaya, M
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Article
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2010
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John Wiley and Sons
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English
⚖ 253 KB
## Abstract We demonstrated activation annealing of Mg‐doped p‐type Al~0.17~Ga~0.83~N in different gases. The hole concentration of Al~0.17~Ga~0.83~N annealed in oxygen is higher than that annealed in nitrogen or air. A hole concentration of 1.3 × 10^16^ cm^−3^ at room temperature was achieved by a