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Global optimization and design for microelectromechanical systems devices based on simulated annealing

✍ Scribed by Ongkodjojo, Andojo; Tay, Francis E H


Book ID
120270990
Publisher
Institute of Physics
Year
2002
Tongue
English
Weight
643 KB
Volume
12
Category
Article
ISSN
0960-1317

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πŸ“œ SIMILAR VOLUMES


A simulator for single-electron tunnel d
✍ I. Karafyllidis πŸ“‚ Article πŸ“… 1999 πŸ› Elsevier Science 🌐 English βš– 65 KB

Simulated annealing is proposed as a simulation method for single-electron tunnel devices and circuits. Tunnel junctions, voltage sources and capacitors are used as elements for the construction of single-electron circuits. The simulator is applied successfully to the twostage tunnel junction invert