✦ LIBER ✦

Ge/Si interdiffusion in the GeSi dots and wetting layers

✍ Scribed by Wan, J.; Luo, Y. H.; Jiang, Z. M.; Jin, G.; Liu, J. L.; Wang, Kang L.; Liao, X. Z.; Zou, J.

Book ID: 120487835
Publisher: American Institute of Physics
Year: 2001
Tongue: English
Weight: 404 KB
Volume: 90
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.1403667

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Electronic structure and compositional i

Electronic structure and compositional interdiffusion in self-assembled Ge quantum dots on Si(001)

✍ Seok, J. H.; Kim, J. Y. 📂 Article 📅 2001 🏛 American Institute of Physics 🌐 English ⚖ 363 KB

Strain and band-edge alignment in single

Strain and band-edge alignment in single and multiple layers of self-assembled Ge/Si and GeSi/Si islands

✍ Schmidt, O. G.; Eberl, K.; Rau, Y. 📂 Article 📅 2000 🏛 The American Physical Society 🌐 English ⚖ 268 KB

Wetting layer formation in superlattices

Wetting layer formation in superlattices with Ge quantum dots on Si(1 0 0)

✍ A.I. Nikiforov; V.V. Ulyanov; V.A. Timofeev; O.P. Pchelyakov 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 190 KB

The influence of parameters of germanium deposition on wetting layer thickness was studied during the growth on the Si(1 0 0) surface. A non-monotone dependence of the thickness on growth temperature was discovered and accounted for by changing the mechanism of the layer-by-layer growth. The conclus

Multiple layers of self-asssembled Ge/Si

Multiple layers of self-asssembled Ge/Si islands: Photoluminescence, strain fields, material interdiffusion, and island formation

✍ Schmidt, O.; Eberl, K. 📂 Article 📅 2000 🏛 The American Physical Society 🌐 English ⚖ 702 KB

The role of interdiffusion and spatial c

The role of interdiffusion and spatial confinement in the formation of resonant raman spectra of Ge/Si(100) heterostructures with quantum-dot arrays

✍ I. V. Kucherenko; V. S. Vinogradov; N. N. Mel’nik; L. V. Arapkina; V. A. Chapnin 📂 Article 📅 2008 🏛 SP MAIK Nauka/Interperiodica 🌐 English ⚖ 321 KB

Potentialities and basic principles of c

Potentialities and basic principles of controlling the plastic relaxation of GeSi/Si and Ge/Si films with stepwise variation in the composition

✍ Yu. B. Bolkhovityanov; A. K. Gutakovskii; A. S. Deryabin; O. P. Pchelyakov; L. V 📂 Article 📅 2008 🏛 Springer 🌐 English ⚖ 571 KB