β Scribed by B.A.T. Petersson
No coin nor oath required. For personal study only.
An analytical and numerical study is carried out addressing the concept of interface mobilities. The introduction of such quantities would enable transmission theory to be employed for primary excitation distributions at interfaces between subsystems covering more than a fraction of the governing wavelength. Complex interface mobilities are derived for the important case of plate-like structures comprising the effective characteristics at the directly excited interface as well as transfer and cross-transfer characteristics between different interfaces. The analysis, which supplements previous work on distributed excitation [1], likewise is for annular interfaces. While the interface mobilities developed are strictly confined to such interfaces, the approach is applicable and the results are also qualitatively valid for other geometries. It is found that the direct interface mobilities can be replaced by ordinary point mobilities in the range over which the circumference (perimeter) of the interface is less than a wavelength of the governing wave. For shorter wavelengths, the interface mobilities decrease with both frequency and size of the interface. With respect to interface transfer and cross-transfer mobilities, the applicability of ordinary point quantities is, besides frequency, also dependent on the interface geometries as well as their relative, spatial locations. The mobility elements derived for the annular case are directly implementable in calculation procedures and the asymptotic expressions developed give essential information with respect to design.
π SIMILAR VOLUMES
The quantum mobility has been measured in Ξ΄-doped GaAs/Al x Ga 1-x As/GaAs structures in which one is able to vary the population of DX states. The experiments show that spatial correlations in the charge distribution enhance the quantum mobility. We are able to correctly account for these correlati
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