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Generation-Recombination Statistics in Semiconductors-A Model with Two Centres

โœ Scribed by H. Friedrich; G. Jungk

Book ID
104537746
Publisher
John Wiley and Sons
Year
1968
Tongue
English
Weight
502 KB
Volume
27
Category
Article
ISSN
0370-1972

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## Communicated by A. Piskorek A drift-diffusion model for a semiconductor device is studied. It is assumed that mobilities saturate for large densities of current carriers. The model includes the generation-recombination term of Shockley-Read-Hall and Auger as well as the avalanche term. The exis