✦ LIBER ✦

Existence and Uniqueness of Solutions for a Semiconductor Device Model with Current Dependent Generation-recombination Term

✍ Scribed by Dariusz Wrzosek

Publisher: John Wiley and Sons
Year: 1996
Tongue: English
Weight: 650 KB
Volume: 19
Category: Article
ISSN: 0170-4214
DOI: 10.1002/(sici)1099-1476(199610)19:15<1199::aid-mma825>3.0.co;2-k

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✦ Synopsis

Communicated by A. Piskorek

A drift-diffusion model for a semiconductor device is studied. It is assumed that mobilities saturate for large densities of current carriers. The model includes the generation-recombination term of Shockley-Read-Hall and Auger as well as the avalanche term. The existence of weak solutions is proved for space dimensions = 1,2,3 and uniqueness of solutions is showed in the case of one space dimension.