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Generation of paramagnetic centers in bulk SiO2 and Si/SiO2 structures by gamma-ray irradiation

✍ Scribed by Awazu Koichi; Watanabe Kikuo

Book ID
113286185
Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
392 KB
Volume
91
Category
Article
ISSN
0168-583X

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Defects induced by high-energy electrons in Si-SiO 2 structure have been studied by the optically stimulated electron emission (OSEE) method. Si-SiO 2 structures with oxide thickness of 100 nm are irradiated with 23 MeV electrons for different durations. It is shown that most of the defects created