The use of numerical simulation to predi
The use of numerical simulation to predict the unlocking stress of dislocations in Cz-silicon wafers
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A. Giannattasio; S. Senkader; S. Azam; R.J. Falster; P.R. Wilshaw
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Article
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2003
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Elsevier Science
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English
โ 143 KB
Under certain conditions, interstitial oxygen atoms in Czochralski-grown silicon (Cz-Si) are known to hinder or completely stop dislocation motion. As a result, oxygen impurities can remarkably improve the mechanical strength of silicon wafers as they are transported and bound to dislocations. The a