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Generation of dislocations in annealed silicon wafers under applied stress

โœ Scribed by M. V. Mezhennyi; M. G. Milvidskii; V. Ya. Reznik; R. J. Falster


Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
207 KB
Volume
2
Category
Article
ISSN
1862-6351

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Under certain conditions, interstitial oxygen atoms in Czochralski-grown silicon (Cz-Si) are known to hinder or completely stop dislocation motion. As a result, oxygen impurities can remarkably improve the mechanical strength of silicon wafers as they are transported and bound to dislocations. The a