Generation and annealing of hot hole induced interface states

✍ Scribed by I.S. Al-kofahi; J.F. Zhang; G. Groeseneken

• Book ID: 104306428
• Publisher: Elsevier Science
• Year: 1997
• Tongue: English
• Weight: 352 KB
• Volume: 36
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/s0167-9317(97)00054-3

✦ Synopsis

Hole injection into SiOz creates interface states not only during the injection, but also after the injection is terminated. This paper studies the annealing behaviour of interface states generated during and post hole injection. Interface states created by different stresses are compared and the role played by electron injection is investigated. The involvement of hydrogen species in the annealing is discussed and the hole detrapping process is addressed.