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Generation and annealing characteristics of paramagnetic centers in oxidized 3C-SiC and 6H-SiC

✍ Scribed by P. J. Macfarlane; M. E. Zvanut


Book ID
107457827
Publisher
Springer US
Year
1999
Tongue
English
Weight
99 KB
Volume
28
Category
Article
ISSN
0361-5235

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We fabricated Schottky barrier diodes using 3C-SiC ΓΏlms deposited on Si(1 1 1) by lamp-assisted thermal chemical vapor deposition and annealed with an ArF excimer laser. Improvement in both the reverse current and the ideality factor was obtained with 1-3 pulses with energy densities of 1.4 -1:6 J=c