ArF-excimer-laser annealing of 3C–SiC films—diode characteristics and numerical simulation
✍ Scribed by T. Mizunami; N. Toyama
- Publisher
- Elsevier Science
- Year
- 2003
- Tongue
- English
- Weight
- 248 KB
- Volume
- 35
- Category
- Article
- ISSN
- 0030-3992
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✦ Synopsis
We fabricated Schottky barrier diodes using 3C-SiC ÿlms deposited on Si(1 1 1) by lamp-assisted thermal chemical vapor deposition and annealed with an ArF excimer laser. Improvement in both the reverse current and the ideality factor was obtained with 1-3 pulses with energy densities of 1.4 -1:6 J=cm 2 per pulse. We solved a heat equation numerically assuming a transient liquid phase of SiC. The calculated threshold energy density for melting the surface was 0:9 J=cm 2 . The thermal e ects of Si substrate on SiC ÿlm were also discussed. The experimental optimum condition was consistent the numerical simulation.