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General Synthesis of Homoleptic Indium Alkoxide Complexes and the Chemical Vapor Deposition of Indium Oxide Films

โœ Scribed by Suh, Seigi; Hoffman, David M.

Book ID
111915889
Publisher
American Chemical Society
Year
2000
Tongue
English
Weight
220 KB
Volume
122
Category
Article
ISSN
0002-7863

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InSe films are grown at 230-420 โ€ข C by low-pressure MOCVD from [(tBu) 2 In(ยต-SetBu)] 2 and [(Me 2 EtC)In(ยต 3 -Se)] 4 . Energy-dispersive X-ray analysis shows that films grown from the first precursor are In rich, while those from the second one are stoichiometric InSe. At temperatures ยก 330 โ€ข C ball