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General plasma behavior in the energy relaxation of electrons in highly p-doped semiconductors

✍ Scribed by U. Hohenester; P. Kocevar; N.E. Hecker; R. Rodrigues-Herzog

Publisher
Springer
Year
1998
Tongue
English
Weight
626 KB
Volume
5
Category
Article
ISSN
1434-6036

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We present a calculation of the spin-relaxation time of photoexcited electrons in p-doped quantum wells of GaAs with the spin-flip mechanism due to the electron-hole exchange interaction. We have observed shorter spin-relaxation times for electrons close to the conduction-band edge when including th