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Ge Epitaxial Growth on GaAs Substrates for Application to Ge-Source/Drain GaAs MOSFETs

✍ Scribed by Luo, Guang-Li; Han, Zong-You; Chien, Chao-Hsin; Ko, Chih-Hsin; Wann, Clement H.; Lin, Hau-Yu; Shen, Yi-Ling; Chung, Cheng-Ting; Huang, Shih-Chiang; Cheng, Chao-Ching; Chang, Chun-Yen

Book ID
126106829
Publisher
The Electrochemical Society
Year
2010
Tongue
English
Weight
504 KB
Volume
157
Category
Article
ISSN
0013-4651

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Designing a large scale CVD reactor for
Designing a large scale CVD reactor for GaAs growth on Ge substrates by multi-hierachy modeling
✍ D. Moscatelli; A. Veneroni; C. Cavallotti; M. Masi; M. Bosi; G. Attolini; C. Pel πŸ“‚ Article πŸ“… 2005 πŸ› John Wiley and Sons 🌐 English βš– 291 KB

## Abstract A novel large scale MOCVD reactor was designed through the use of models of different complexity and addressing the growth process at different length scales (multi‐hierarchy and multi‐scale approach). Particular care was taken in designing the gas distribution over the whole susceptor