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Ge dot organization on Si substrates patterned by focused ion beam

✍ Scribed by Karmous, A.; Cuenat, A.; Ronda, A.; Berbezier, I.; Atha, S.; Hull, R.

Book ID
120576435
Publisher
American Institute of Physics
Year
2004
Tongue
English
Weight
545 KB
Volume
85
Category
Article
ISSN
0003-6951

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Grazing-incidence diffraction strain ana
Grazing-incidence diffraction strain analysis of a laterally patterned Si wafer treated by focused Ge and Au ion beam implantation
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## Abstract Strain analysis of a laterally patterned Si‐wafer was carried out utilizing X‐ray grazing‐incidence diffraction with synchrotron radiation. The lateral patterning was done by focused ion beam implantation using an ion source of liquid AuGeSi alloy. Samples were prepared by either 35 keV