## Abstract Strain analysis of a laterally patterned Si‐wafer was carried out utilizing X‐ray grazing‐incidence diffraction with synchrotron radiation. The lateral patterning was done by focused ion beam implantation using an ion source of liquid AuGeSi alloy. Samples were prepared by either 35 keV
The birefringence and polarization effects of amorphous Ge and Si gratings by focused-ion-beam
✍ Scribed by Kyung Shin; Jin-Woo Kim; Jung-Il Park; Young-Jong Lee; Hyun-Yong Lee; Hong-Bay Chung
- Book ID
- 108411126
- Publisher
- Elsevier Science
- Year
- 2000
- Tongue
- English
- Weight
- 673 KB
- Volume
- 53
- Category
- Article
- ISSN
- 0167-9317
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