✦ LIBER ✦

Preferential ordering of self-assembled Ge islands on focused ion-beam patterned Si(100)

✍ Scribed by K. Das; S. Das; R. K. Singha; S. K. Ray; A. K. Raychaudhuri

Book ID: 106478248
Publisher: Springer Netherlands
Year: 2012
Tongue: English
Weight: 718 KB
Volume: 14
Category: Article
ISSN: 1388-0764
DOI: 10.1007/s11051-012-0725-8

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Two-dimensional lateral ordering of self

Two-dimensional lateral ordering of self-assembled Ge islands on patterned substrates

✍ Zhenyang Zhong; Gang Chen; J Stangl; Th Fromherz; F Schäffler; G Bauer 📂 Article 📅 2004 🏛 Elsevier Science 🌐 English ⚖ 318 KB

Site-selective growth of self-assembled

Site-selective growth of self-assembled InAs quantum dots on focused ion beam patterned GaAs

✍ M. Mehta; D. Reuter; A. Melnikov; A.D. Wieck; A. Remhof 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 373 KB

A site-selective growth of self-organized InAs quantum dots (QDs) employing a combination of in-situ focused ion beam (FIB) implantation and self-organized molecular beam epitaxy (MBE) growth has been successfully demonstrated. First, a buffer layer of GaAs was grown by MBE before a square lattice o

Interaction of self-assembled Ge islands

Interaction of self-assembled Ge islands and adjacent Si layers grown on unpatterned and patterned Si(001) substrates

✍ T. I. Kamins; D. P. Basile 📂 Article 📅 2000 🏛 Springer US 🌐 English ⚖ 712 KB