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Gate-Induced Schottky Barrier Lowering Effect in AlGaN/GaN Metal–2DEG Tunnel Junction Field Effect Transistor

✍ Scribed by Li Yuan; Hongwei Chen; Qi Zhou; Chunhua Zhou; Chen, K.J.

Book ID: 115491546
Publisher: IEEE
Year: 2011
Tongue: English
Weight: 410 KB
Volume: 32
Category: Article
ISSN: 0741-3106
DOI: 10.1109/led.2011.2159258

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