Poole Frenkel current and Schottky emission in SiN gate dielectric in AlGaN/GaN metal insulator semiconductor heterostructure field effect transistors

✍ Scribed by Hanna, Mina J.; Zhao, Han; Lee, Jack C.

• Book ID: 120424933
• Publisher: American Institute of Physics
• Year: 2012
• Tongue: English
• Weight: 952 KB
• Volume: 101
• Category: Article
• ISSN: 0003-6951
• DOI: 10.1063/1.4758995