Gate-First AlGaN/GaN HEMT Technology for High-Frequency Applications
✍ Scribed by Saadat, Omair I. (author);Chung, Jinwook W. (author);Piner, Edwin L. (author);Palacios, Tomás (author)
- Book ID
- 120379892
- Publisher
- IEEE
- Year
- 2009
- Tongue
- English
- Weight
- 486 KB
- Volume
- 30
- Category
- Article
- ISSN
- 0741-3106
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## Abstract In this paper, the structure and processing of AlGaN/GaN high electron mobility transistors have been optimized for maximum small signal gain at high frequencies. The effect of the gate resistance, gate‐to‐drain capacitance and output conductance on the power gain cut‐off frequency, __f
## Abstract In the article [1] featured at Editor's Choice, the structure and processing of AlGaN/GaN high electron mobility transistors (HEMTs) have been optimized for maximum small signal gain at high frequencies. The cover picture combines the sample structure – shown schematically and in a scan