Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications

✍ Scribed by Saito, W.; Takada, Y.; Kuraguchi, M.; Tsuda, K.; Omura, I.

• Book ID: 114618110
• Publisher: IEEE
• Year: 2006
• Tongue: English
• Weight: 640 KB
• Volume: 53
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2005.862708