An accurate 2-D model for transconductan
✍
Abhinav Kranti; Rashmi; S. Haldar; R. S. Gupta
📂
Article
📅
2001
🏛
John Wiley and Sons
🌐
English
⚖ 289 KB
## Abstract An accurate analytical model for the transconductance‐to‐current ratio (__g~m~__/__I~ds~__), current–voltage characteristics, and drain conductance is developed for a vertical surrounding‐gate (VSG) MOSFET based on the solution of the 2‐D Poisson's equation. The dependence of __g~m~__/_