✦ LIBER ✦

Gate chamber with a vertical-drop gate for deep outlets

✍ Scribed by G. A. Chepaikin; V. V. Maksimov

Book ID: 105553811
Publisher: Springer
Year: 1977
Tongue: English
Weight: 446 KB
Volume: 11
Category: Article
ISSN: 1570-1468
DOI: 10.1007/bf02379030

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

A transistorized linear gate for use wit

A transistorized linear gate for use with a double grid ionization chamber

✍ A. Sasaki; M. Tsukuda 📂 Article 📅 1965 🏛 Elsevier Science ⚖ 257 KB

A fringing-capacitance model for deep-su

A fringing-capacitance model for deep-submicron MOSFET with high-k gate dielectric

✍ F. Ji; J.P. Xu; P.T. Lai; J.G. Guan 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 189 KB

An analytical model of fringing capacitances for deep-submicron MOSFET with high-k gate dielectric, including gate dielectric fringing-capacitance and gate electrode fringing-capacitance, is obtained by the conformal-mapping transformation method. It is demonstrated that the fringing-capacitance eff

A physics-based scheme for potentials of

A physics-based scheme for potentials of a-Si:H TFT with symmetric dual gate considering deep Gaussian DOS distribution

✍ Qin, Jian; Yao, R.H. 📂 Article 📅 2014 🏛 Elsevier Science 🌐 English ⚖ 932 KB

Analytical model for deriving the thresh

Analytical model for deriving the threshold voltage of a short gate SOI MESFET with vertically non-uniformly doped silicon film

✍ Suh, C.H. 📂 Article 📅 2010 🏛 The Institution of Engineering and Technology 🌐 English ⚖ 430 KB

Study of gate dielectric permittivity va

Study of gate dielectric permittivity variation with different equivalent oxide thickness on channel engineered deep sub-micrometer n-MOSFET device for mixed signal applications

✍ A. Srivastava; Partha Sarkar; Chandan Kumar Sarkar 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 222 KB