✦ LIBER ✦

Gas response dependence on gate metal morphology of field-effect devices

✍ Scribed by Mikael Löfdahl; Choosri Utaiwasin; Anders Carlsson; Ingemar Lundström; Mats Eriksson

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Effect ofd-electrons on the frequency re

✍ H.D. Riccius 📂 Article 📅 1977 🏛 Elsevier Science ⚖ 560 KB

The Effect of Gate-Dielectric Surface En

✍ S. Y. Yang; K. Shin; C. E. Park 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 611 KB

Influence of mass transfer on the steady

✍ M. Johansson; D. Loyd; I. Lundström 📂 Article 📅 1997 🏛 Elsevier Science 🌐 English ⚖ 822 KB

A model for shifts in the gate turn-on v

✍ Stanley, A.G. 📂 Article 📅 1967 🏛 IEEE 🌐 English ⚖ 375 KB

Effect of gate-field dependent mobility

✍ van Langevelde, R.; Klaassen, F.M. 📂 Article 📅 1997 🏛 IEEE 🌐 English ⚖ 264 KB

Channel length scaling and the impact of

✍ D. Rechem; S. Latreche; C. Gontrand 📂 Article 📅 2009 🏛 Springer-Verlag 🌐 English ⚖ 568 KB