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GaP:Mg layers grown on GaN by MOCVD

✍ Scribed by Shuti Li; Jun Su; Guanghan Fan; Chao Liu; Jianxing Cao; Yian Yin

Book ID
108166123
Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
518 KB
Volume
312
Category
Article
ISSN
0022-0248

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Photoluminescence of Mg-doped m-plane Ga
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## Abstract Photoluminescence (PL) properties are reported for a set of __m__‐plane GaN films with Mg doping varied from mid 10^18^ cm^βˆ’3^ to above 10^20^ cm^βˆ’3^. The samples were grown with MOCVD at reduced pressure on low defect density bulk GaN templates. The sharp line near bandgap bound excito