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GaN/LiNbO3 (0 0 0 1) interface formation calculated from first-principles

✍ Scribed by Simone Sanna; Wolf Gero Schmidt


Book ID
103820183
Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
865 KB
Volume
256
Category
Article
ISSN
0169-4332

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Origins of GaN(0 0 0 1) s
✍ S VΓ©zian; F Semond; J Massies; D.W Bullock; Z Ding; P.M Thibado πŸ“‚ Article πŸ“… 2003 πŸ› Elsevier Science 🌐 English βš– 448 KB

The reconstructions of the Ga polarity GaN(0 0 0 1) surface with and without trace amounts of arsenic and prepared by molecular beam epitaxy (MBE) have been studied with in situ reflection high-energy electron diffraction (RHEED) and scanning tunneling microscopy (STM). Various reconstructions are o