𝔖 Bobbio Scriptorium
✦   LIBER   ✦

GaN HEMT technology for base-station amplifiers


Book ID
104368060
Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
207 KB
Volume
18
Category
Article
ISSN
0961-1290

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


A 40-W balanced GaN HEMT class-E power a
✍ Yong-Sub Lee; Mun-Woo Lee; Yoon-Ha Jeong πŸ“‚ Article πŸ“… 2009 πŸ› John Wiley and Sons 🌐 English βš– 327 KB

## Abstract A balanced class‐E power amplifier (PA) using a push‐pull GaN HEMT for high power and high efficiency is represented. For validation, a class‐E PA is designed and implemented using a push‐pull type GaN HEMT and tested for a single tone of 2.14 GHz. The measured results show that the bal

Linearity-optimized class-E Doherty ampl
✍ Yong-Sub Lee; Mun-Woo Lee; Yoon-Ha Jeong πŸ“‚ Article πŸ“… 2009 πŸ› John Wiley and Sons 🌐 English βš– 426 KB

## Abstract In this article, we report the linearity improvement of the GaN HEMT class‐E Doherty power amplifier (CEDA). For the linearity improvement, not only the gate biases but also the matching circuits of the carrier and peaking cells are optimally controlled at a pout of 38 dBm, which is a 7