✦ LIBER ✦

AlGaN/GaN HEMT-based fully monolithic X-band low noise amplifier

✍ Scribed by R. Schwindt; V. Kumar; O. Aktas; J.-W. Lee; I. Adesida

Publisher: John Wiley and Sons
Year: 2005
Tongue: English
Weight: 390 KB
Volume: 2
Category: Article
ISSN: 1862-6351
DOI: 10.1002/pssc.200461544

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Phase noise study of AlGaN/GaN HEMT X-ba

Phase noise study of AlGaN/GaN HEMT X-band oscillator

✍ S. V. Danylyuk; S. A. Vitusevich; V. Kaper; V. Tilak; N. Klein; L. F. Eastman; J 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 223 KB

A fully integrated low voltage (0.5 V) X

A fully integrated low voltage (0.5 V) X-band CMOS low noise amplifier

✍ Baohong Liu; Jianjun Zhou; Junfa Mao 📂 Article 📅 2010 🏛 John Wiley and Sons 🌐 English ⚖ 180 KB

## Abstract In this article, a 0.5 V X‐band low noise amplifier (LNA) composed of two common‐source stages is designed and fabricated with 0.18 um CMOS technology.Based on the structure of cascaded common‐source stages and forward body bias technology, the supply voltage is reduced. Measurement res