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GaN growth on porous silicon by MOVPE

✍ Scribed by T Boufaden; N Chaaben; M Christophersen; B El Jani

Book ID: 108360898
Publisher: Elsevier Science
Year: 2003
Tongue: English
Weight: 361 KB
Volume: 34
Category: Article
ISSN: 0026-2692
DOI: 10.1016/s0026-2692(03)00130-7

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## Abstract Homoepitaxial growth of GaN by metal organic vapor phase epitaxy (MOVPE) was systematically evaluated using nominal __c__‐plane and various vicinal GaN(0001) wafers: 1°, 2°, 4°, and 8° offcut in the directions of 〈10$\bar 1$0〉 and 〈11$\bar 2$0〉. It was found that a hillock morphology fo