GaInAsPSb/GaSb heterostructures for mid-infrared light emitting diodes

✍ Scribed by Smirnov, V. M. ;Batty, P. J. ;Jones, R. ;Krier, A. ;Vasil'ev, V. I. ;Gagis, G. S. ;Kuchinskii, V. I.

• Book ID: 105364174
• Publisher: John Wiley and Sons
• Year: 2007
• Tongue: English
• Weight: 284 KB
• Volume: 204
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200674141

✦ Synopsis

Abstract

GaInAsPSb is a new narrow gap semiconductor material which is suitable for the fabrication of semiconductor light sources for the mid‐infrared spectral range. Photoluminescence emission spectra from GaInAsPSb grown by LPE and lattice‐matched onto GaSb substrates were investigated. Homojunction p–i–n light‐emitting diodes in this pentenary alloy were fabricated and electroluminescence peaking near 4.0 μm at room temperature was observed. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)