GaInAsPSb/GaSb heterostructures for mid-
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Smirnov, V. M. ;Batty, P. J. ;Jones, R. ;Krier, A. ;Vasil'ev, V. I. ;Gagis, G. S
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Article
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2007
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John Wiley and Sons
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English
β 284 KB
## Abstract GaInAsPSb is a new narrow gap semiconductor material which is suitable for the fabrication of semiconductor light sources for the midβinfrared spectral range. Photoluminescence emission spectra from GaInAsPSb grown by LPE and latticeβmatched onto GaSb substrates were investigated. Homoj