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Gain-switched pulse generation with semiconductor lasers

✍ Scribed by Aspin, G.J.; Carroll, J.E.

Book ID
114454041
Publisher
The Institution of Electrical Engineers
Year
1982
Weight
799 KB
Volume
129
Category
Article
ISSN
0143-7100

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Picosecond pulse generation for visible
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## Abstract Various characteristics of a gain‐switched InGaAlP Fabry–Perot semiconductor laser operating with a center wavelength of 650 nm for short‐distance ultra‐fast optical transmission applications. The optimum gain switching conditions are studied in detail with this semiconductor laser. Β© 2

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## Abstract Originally published Microwave Opt Technol Lett 35: 65–67, 2002. Β© 2002 Wiley Periodicals, Inc. Microwave Opt Technol Lett 35: 342–342, 2002; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.10584