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Picosecond pulse generation for visible semiconductor laser operating at 650-nm wavelength with the use of the gain-switching technique

✍ Scribed by Kwang H. Oh; N. Hwang; J. S. Koh; Dug Y. Kim


Publisher
John Wiley and Sons
Year
2002
Tongue
English
Weight
156 KB
Volume
35
Category
Article
ISSN
0895-2477

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✦ Synopsis


Abstract

Various characteristics of a gain‐switched InGaAlP Fabry–Perot semiconductor laser operating with a center wavelength of 650 nm for short‐distance ultra‐fast optical transmission applications. The optimum gain switching conditions are studied in detail with this semiconductor laser. © 2002 Wiley Periodicals, Inc. Microwave Opt Technol Lett 35: 65–67, 2002; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.10517


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Addendum to: Picosecond pulse generation
✍ Kwang H. Oh; N. Hwang; J. S. Koh; Dug Y. Kim 📂 Article 📅 2002 🏛 John Wiley and Sons 🌐 English ⚖ 41 KB

## Abstract Originally published Microwave Opt Technol Lett 35: 65–67, 2002. © 2002 Wiley Periodicals, Inc. Microwave Opt Technol Lett 35: 342–342, 2002; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.10584