## Abstract Originally published Microwave Opt Technol Lett 35: 65–67, 2002. © 2002 Wiley Periodicals, Inc. Microwave Opt Technol Lett 35: 342–342, 2002; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.10584
✦ LIBER ✦
Picosecond pulse generation for visible semiconductor laser operating at 650-nm wavelength with the use of the gain-switching technique
✍ Scribed by Kwang H. Oh; N. Hwang; J. S. Koh; Dug Y. Kim
- Publisher
- John Wiley and Sons
- Year
- 2002
- Tongue
- English
- Weight
- 156 KB
- Volume
- 35
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
Abstract
Various characteristics of a gain‐switched InGaAlP Fabry–Perot semiconductor laser operating with a center wavelength of 650 nm for short‐distance ultra‐fast optical transmission applications. The optimum gain switching conditions are studied in detail with this semiconductor laser. © 2002 Wiley Periodicals, Inc. Microwave Opt Technol Lett 35: 65–67, 2002; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.10517
📜 SIMILAR VOLUMES
Addendum to: Picosecond pulse generation
✍
Kwang H. Oh; N. Hwang; J. S. Koh; Dug Y. Kim
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Article
📅
2002
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John Wiley and Sons
🌐
English
⚖ 41 KB