## Abstract Various characteristics of a gain‐switched InGaAlP Fabry–Perot semiconductor laser operating with a center wavelength of 650 nm for short‐distance ultra‐fast optical transmission applications. The optimum gain switching conditions are studied in detail with this semiconductor laser. © 2
✦ LIBER ✦
Theory of Ultrashort Pulse Generation and Amplification by Gain-Switched Semiconductor Lasers
✍ Scribed by E. Schöll; M. Schell
- Publisher
- John Wiley and Sons
- Year
- 1988
- Tongue
- English
- Weight
- 349 KB
- Volume
- 150
- Category
- Article
- ISSN
- 0370-1972
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## Abstract Originally published Microwave Opt Technol Lett 35: 65–67, 2002. © 2002 Wiley Periodicals, Inc. Microwave Opt Technol Lett 35: 342–342, 2002; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.10584
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