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GaAsFET and HEMT small-signal parameter extraction from measured S-parameters

✍ Scribed by Wurtz, L.T.


Book ID
114542946
Publisher
IEEE
Year
1994
Tongue
English
Weight
418 KB
Volume
43
Category
Article
ISSN
0018-9456

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## Abstract A method to uniquely determine each small signal circuit element from measured S parameters is used to obtain the rf I‐V curve for uniform‐doped MESFETs. No dc measurement is needed in this method. The resulting rf I‐V curve differs from the static dc I‐V curve and is useful to predict