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GaAs MOSFET using MBE-grown Ga2O3 (Gd2 O3) as gate oxide

✍ Scribed by Kim, S.-J.; Park, J.-W.; Hong, M.; Mannaerts, J.P.


Book ID
114447653
Publisher
The Institution of Electrical Engineers
Year
1998
Tongue
English
Weight
306 KB
Volume
145
Category
Article
ISSN
1350-2409

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Systematic temperature-dependent capacitance-voltage and conductance measurements were used to study the electrical characteristics of molecular beam epitaxy (MBE) and atomic layer deposition (ALD) oxides on In 0.2 Ga 0.8 As/GaAs. The distribution of interfacial density of states (D it ) within the