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Impact of metal/oxide interface on DC and RF performance of depletion-mode GaAs MOSFET employing MBE grown Ga2O3(Gd2O3) as gate dielectric

✍ Scribed by B Yang; P.D Ye; J Kwo; M.R Frei; H.-J.L Gossmann; J.P Mannaerts; M Sergent; M Hong; K Ng; J Bude


Book ID
108341832
Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
155 KB
Volume
251
Category
Article
ISSN
0022-0248

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