GaAs MOS structures with Al2O3 grown by molecular beam reaction under UV excitation
✍ Scribed by S. Yokoyama; K. Yukitomo; M. Hirose; Y. Osaka
- Book ID
- 103419352
- Publisher
- Elsevier Science
- Year
- 1979
- Tongue
- English
- Weight
- 398 KB
- Volume
- 56
- Category
- Article
- ISSN
- 0040-6090
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## Abstract We have demonstrated optically pumped room‐temperature pulse lasing at 300.4 nm from an AlGaN‐based multiple‐quantum‐well (MQW) structure grown by plasma‐assisted molecular beam epitaxy on a c‐sapphire substrate. The lasing was achieved at the threshold peak power of ∼12 MW/cm^2^. The M