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GaAs LPE growth and its application to FET

✍ Scribed by Y. Nanishi; K. Takahei; K. Kuroiwa


Book ID
107789042
Publisher
Elsevier Science
Year
1978
Tongue
English
Weight
409 KB
Volume
45
Category
Article
ISSN
0022-0248

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## Abstract LPE growth of InP on GaAs is shown to be possible from indium or tin as a solvent, respectively. Only growth on (111) B faces yields acceptable smooth layers. From In/InP‐melts layers with inclusions near the heterojunctions are obtained. No such microscopically small inclusions were ob

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