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GaAs enhancement/depletion n-channel MOSFET

โœ Scribed by E. Kohn; A. Colquhoun; H.L. Hartnagel


Publisher
Elsevier Science
Year
1978
Tongue
English
Weight
855 KB
Volume
21
Category
Article
ISSN
0038-1101

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N-channel accumulation layer MOSFET oper
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An accumulation layer n-channel MOSFET that operates at 4 K has been fabricated. Sharp hysteretic current kinks in the I-V characteristic are observed, where the transistor switches discontinuously between two well defined states. The kinks are modelled in terms of changes in the device potential co