Recent advances in high quality, low doped GaAs and nรท/n GaAs hi-lo junctions, indicate a different approach to GaAs solar cell design. It is shown in this paper that by using a low doped base and a back surface minority carrier mirror, efficiencies as high as 26% can be obtained at 1 Sun AM 1.5. It
GaAs-based ternary compounds and solar cell research
โ Scribed by S.M. Vernon; S.P. Tobin; R.G. Wolfson
- Publisher
- Elsevier Science
- Year
- 1987
- Weight
- 59 KB
- Volume
- 21
- Category
- Article
- ISSN
- 0379-6787
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