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GaAlAsGaAs p-n-p heterojunction bipolar transistors grown by MOCVD

✍ Scribed by R.W. Glew; M.S. Frost

Publisher
Elsevier Science
Year
1984
Tongue
English
Weight
325 KB
Volume
68
Category
Article
ISSN
0022-0248

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This work describes an approach for small signal modelling of GaAs-based ( ) ( heterojunction bipolar transistors HBTs for low-voltage r r r r r high-power application i.e., 4 2 ) V s 3 V, J s 3 = 10 A r r r r r cm . The parameter extraction procedure is discussed in ce c detail. Furthermore, it is