Fringing-Induced Drain Current Improvement in the Tunnel Field-Effect Transistor With High- Gate Dielectrics

✍ Scribed by Schlosser, M.; Bhuwalka, K.K.; Sauter, M.; Zilbauer, T.; Sulima, T.; Eisele, I.

• Book ID: 114619266
• Publisher: IEEE
• Year: 2009
• Tongue: English
• Weight: 506 KB
• Volume: 56
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2008.2008375