A comprehensive simulation procedure is presented for describing the behaviour of high-frequency "eld e!ect transistors (FETs). It combines a circuit model of the intrinsic part of the device with a hybrid "nite elements/"nite di!erences (FE/FD) technique directly implemented in time domain (TD). Th
Frequency-dependent envelope finite-element time-domain analysis of dispersion materials
✍ Scribed by V. F. Rodríguez-Esquerre; Masanori Koshiba; H. E. Hernández-Figueroa
- Publisher
- John Wiley and Sons
- Year
- 2004
- Tongue
- English
- Weight
- 177 KB
- Volume
- 44
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
An efficient frequency-dependent finite-element time-domain method for the analysis of dispersive media is presented. The formulation, based on the 2 nd -order wave equation, includes a slowly-varying envelope approximation (SVEA) and perfectly matched layers (PMLs), and the dispersion effects of the medium are incorporated by an accurate computation of the recursive evaluation of the convolution integral. Numerical examples in microwaves and optical frequencies are given to validate the proposed formulation.
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